| PART |
Description |
Maker |
| HYS72T256322HP |
240-Pin Dual-Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T1G242EP-3-C HYS72T1G242EP-3.7-C HYS72T1G242E |
240-Pin Dual Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T1G042ER |
240-Pin Dual Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T512022HR-3.7-A HYS72T512022HR-3S-A HYS72T512 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T128020HP-3S-A |
240-Pin Registered DDR2 SDRAM Modules
|
Infineon Technologies Corporation
|
| HYS72T64000HP-3.7-A HYS72T64000HP-3S-A HYS72T12800 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64000HP-3-B HYS72T64000HP-3.7-B HYS72T64000H |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64001HP |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| M312L5128MT0 M312L5128MT0-CA0 M312L5128MT0-CA2 M31 |
DDR SDRAM Registered Module ( TSOP-II ) 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 0702871038 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 80 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 0702871220 70287-1220 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 52 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
2.54mm (.100") Pitch C-Grid垄莽 Header, Breakaway, Dual Row, Vertical, with RetentionPin, 52 Circuits, 6.10mm (.240") Mating Pin Length, 0.76楼矛m (30楼矛") Gold (Au)
|
Molex Electronics Ltd.
|
